2sA2201 no. a0581-1/4 applications dc / dc converters, relay drivers, lamp drivers, motor drivers. features adoption of fbet , mbit processes. lar ge current capacitance. low collector -to-emitter saturation voltage. high-speed switching. high allowable power dissipation. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base v oltage v cbo - -80 v collector-to-emitter v oltage v ces - -80 v collector-to-emitter v oltage v ceo - -80 v emitter-to-base v oltage v ebo -- 7 v collector current i c - -2.5 a collector current (pulse) i cp -- 4 a base current i b - -500 ma collector dissipation p c mounted on a ceramic board (250mm 2 ? 0.8mm) 1.3 w t c=25 c 3.5 w junction t emperature tj 150 c storage t emperature t stg - -55 to +150 c electrical characteristics at t a=25 c ratings parameter symbol conditions min typ max unit collector cutof f current i cbo v cb =- -70v , i e =0a - - 1 a emitter cutof f current i ebo v eb =- -4v , i c =0a - - 1 a dc current gain h fe v ce =--5v, i c =--100ma 200 400 gain-bandwidth product f t v ce =- -10v , i c =- -500ma 350 mhz output capacitance cob v cb =- -10v , f=1mhz 23 pf marking : rb continued on next page. sany o semiconductor s d ata sheet tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena0581 d2706ea ti im tc-00000419 any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before using any sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. 2sA2201 pnp epitaxial planar silicon t ransistor high-voltage switching applications http://
2sA2201 no. a0581-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit collector-to-emitter saturation v oltage v ce (sat) i c =- -1a, i b =- -100ma - -90 - -180 mv base-to-emitter saturation v oltage v be (sat) i c =- -1a, i b =- -100ma - -0.85 - -1.2 v collector-to-base breakdown v oltage v (br)cbo i c =- -10 a, i e =0a - -80 v collector-to-emitter breakdown v oltage v (br)ces i c =- -100 a, r be =0 ? - -80 v collector-to-emitter breakdown v oltage v (br)ceo i c =- -1ma, r be = - -80 v emitter-to-base breakdown v oltage v (br)ebo i e =- -10 a, i c =0a - - 7 v t urn-on t ime t on see specified t est circuit. 40 ns storage t ime t stg see specified t est circuit. 500 ns fall t ime t f see specified t est circuit. 28 ns package dimensions switching t ime t est circuit unit : mm (typ) 7007a-004 base-to-emitter v oltage, v be -- v i c -- v be collector current, i c -- a i c -- v ce collector -to-emitter v oltage, v ce - - v collector current, i c - - a 0 -- 0 . 4 -- 0 . 8 -- 1 . 2 -- 1 . 6 -- 2 . 0 0- - 0 .1 - -0.2 - -0.3 - -0.4 - -0.5 i b = --5ma - -20ma - -60ma -- 140ma - -120ma - -80ma - -100ma - -200ma it1 1871 - -180ma - -160ma - -40ma t a=75 c 25 c - -25 c -- 2 . 5 -- 2 . 0 -- 1. 0 -- 0 .5 -- 1 .5 0 0- -0.2 - -0.4 - -0.6 - -0.8 - -1.0 it1 1872 v ce = --5v v r r l v cc = - -40v v be =5v i c = - -10i b1 =10i b2 = - -0.5a ++ 50 ? input output 1k ? 220 f 470 f pw=20 s i b1 i b2 d.c. 1% 1 : base 2 : collector 3 : emitter sany o : pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 0.75 top view bottom view
2sA2201 no. a0581-3/4 cob -- v cb v be (sat) -- i c f t -- i c v ce (sat) -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz collector -to-base v oltage, v cb -- v output capacitance, cob -- pf collector current, i c -- a base-to-emitter saturation v oltage, v be (sat) - - v collector current, i c -- a collector -to-emitter saturation v oltage, v ce (sat) - - v a s o p c - - t a collector dissipation, p c - - w ambient t emperature, t a - - c collector current, i c -- a collector -to-emitter v oltage, v ce -- v h fe -- i c collector current, i c - - a dc current gain, h fe p c - - t c collector dissipation, p c - - w case t emperature, t c - - c - -0.01 - -0.1 - -1.0 7 5 3 2 7 5 3 2 7 5 3 2 - -0.1 - -0.01 - -1.0 - -100 - -10 25 37 2 2 5 37 25 37 25 37 i cp = - -4a 100ms < 10 s 10ms 1ms i c = --2.5a it1 1878 dc operation ( t c=25 c ) dc operation ( t a=25 c ) 500 s 100 s 20 060 40 80 100 140 120 160 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 it1 1870 0 0.2 0.4 0.6 0.8 1.6 1.0 1.2 1.3 1.4 20 06 0 40 80 100 140 120 160 it1 1869 7 3 100 2 5 1000 7 5 3 - -0.01 25 7 7 3 - -0.1 25 32 5 3 - -1.0 it1 1877 v ce = - -10v mounted on a ceramic board (250mm 2 ? 0.8mm) - -0.1 2 3 5 2 3 5 7 - -0.01 7 - -0.01 - -0.1 23 5 7 2 3 5 7 2 3 5 - -1.0 t a=75 c -- 25 c it11874 i c / i b =10 t a=75 c 25 c - -25 c 1000 100 7 7 5 3 2 - -0.01 3 25 - -0.1 73 25 7 3 25 - -1.0 v ce = - -5v it11873 25 c - -10 - -0.01 --0.1 --1.0 t a= - -25 c 25 c 75 c 3 2 7 5 3 2 23 5 7 2 3 5 7 2 3 5 i c / i b =10 it1 1875 2 7 5 3 2 7 100 10 - -0.1 23 7 52 3 7 52 3 7 5 - -1.0 - -10 - -100 it1 1876 f=1mhz tc = 2 5 c single pulse mounted on a ceramic board (250mm 2 ? 0.8mm)
2sA2201 no. a0581-4/4 specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ps this catalog provides information as of december , 2006. specifications and information herein are subject to change without notice.
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